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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1706TP
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The PA1706TP which has a heat spreader is N-Channel MOS Field Effect Transistor designed for DC/DC converter and power management application of notebook computer.
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8, 9 ; Drain
FEATURES
* Low on-state resistance RDS(on)1 = 7.8 m MAX. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 10.0 m MAX. (VGS = 4.5 V, ID = 7.0 A) * Low Ciss: Ciss = 3000 pF TYP. (VDS = 10 V, VGS = 0 V) * Small and surface mount package (Power HSOP8)
1.49 0.21 1.44 TYP.
1 5.2 +0.17 -0.2 4 0.8 0.2 S
+0.10 -0.05
6.0 0.3 4.4 0.15
0.05 0.05
0.15
1.27 TYP. 0.40
1
+0.10 -0.05
0.10 S 0.12 M
ORDERING INFORMATION
PART NUMBER PACKAGE Power HSOP8
2.0 0.2
2.9 MAX.
9 4.1 MAX.
PA1706TP
8
5
ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (DC)
Note1 Note2
VDSS VGSS ID(DC)1 ID(DC)2 ID(pulse) PT1 PT2 Tch Tstg
30 20 28 17 100 39 3 150 -55 to + 150 19 36.1
V V A A A W W C C A mJ
Gate Protection Diode Gate Body Diode Drain
Drain Current (pulse)
Total Power Dissipation (TC = 25C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3 Note1
IAS EAS
1.1 0.2
4
EQUIVALENT CIRCUIT
Source
Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec 2. PW 10 s, Duty cycle 1% 3. Starting Tch = 25C, VDD = 15 V, RG = 25 , L = 100 H, VGS = 20 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G15850EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan
(c)
2001
PA1706TP
ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 24 V VGS = 10 V ID = 13 A IF = 13 A, VGS = 0 V IF = 13 A, VGS = 0 V di/dt = 100 A/s TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 7.0 A VGS = 10 V, ID = 7.0 A VGS = 4.5 V, ID = 7.0 A VGS = 4.0 V, ID = 7.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 13 A VGS = 10 V RG = 10 1.5 10 2.0 22 5.8 7.0 8.0 3000 950 380 20 20 80 30 56 9 14 0.8 43 50 7.8 10.0 12.0 MIN. TYP. MAX. 10 10 2.5 UNIT
A A
V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet G15850EJ1V0DS
PA1706TP
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 50 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
100 80 60 40 20
PT - Total Power Dissipation - W
20 40 60 80 100 120 140 160
40 30
20
10
0
0
20
40
60
80
100 120 140 160
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 1000
ID(pulse)
ID - Drain Current - A
100
d ite V) Lim10 n) (o S = S RD t VG (a
PW
ID(DC)
10
P Li ow me ite r D d is
=
1
m
s
m
10
s
sip
at
io
n
1 TC = 25C Single Pulse 0.1 1 10 100
0.1 0.01
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100
rth(t) - Transient Thermal Resistance - C/W
10 Rth(ch-C) = 3.21C/W
1
0.1
Single Pulse 0.01 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet G15850EJ1V0DS
3
PA1706TP
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed
50
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 10 V 4.5 V 4.0 V Pulsed
ID - Drain Current - A
10
ID - Drain Current - A
VDS = 10 V
TA = 125C 75C 25C -25C
40 30 20 10
1
0.1 0.01
0
1
2
3
4
0
0.2
0.4
0.6
0.8
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
|yfs| - Forward Transfer Admittance - S
1000
VDS =10 V Pulsed
TA = -25C 25C 75C 125C
RDS(on) - Drain to Source On-state Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 40
Pulsed
100
30
10
20
1
10
ID = 7.0 A
0.1
1
10
100
0
2
4
6
8
10
12 14 16 18 20
ID- Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20
VGS(off) - Gate to Source Cut-off Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 -40 -20 0 20 40 60 80 100 120 140 160 VDS = 10 V ID = 1 mA
Pulsed
15
10
VGS = 4.0 V 4.5 V
5
10 V
0 0.1
1
10
100
1000
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet G15850EJ1V0DS
PA1706TP
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 18 16 14 12 10 8 6 4 2 0 -40 -20 ID = 7.0 A 0 20 40 60 80 100 120 140 160 VGS = 4.0 V 4.5 V 10 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000
IF - Diode Forward Current - A
Pulsed
100 0V VGS =10 V 10
1
0.1 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS
Ciss 1000 Coss Crss 100
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0 V f = 1 MHz
1000
100 tr 10
td(off) tf td(on)
10 0.1
1
10
100
1 0.1
VDD = 15 V VGS = 10 V RG = 10 1 10 100 ID - Drain Current - A
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
trr - Reverse Recovery Diode - ns
VDS - Drain to Source Voltage - V
30
100
VDD = 24 V 15 V 6V VGS
12 10
20
8 6
10
10 VDS 0 20 40 60 80
4 2 0 100
1 0.1
1
10
100
ID - Drain Current - A
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
di/dt = 100 A/ s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 13 A
Data Sheet G15850EJ1V0DS
5
PA1706TP
[MEMO]
6
Data Sheet G15850EJ1V0DS
PA1706TP
[MEMO]
Data Sheet G15850EJ1V0DS
7
PA1706TP
* The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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